Abstract
AbstractBoth PL and EPR are simultaneously adopted to systematically elucidate the defect centers of green luminescence (GL) as well as the EPR peak g = 1.96 of ZnO and the relationship between them. The PL of ZnO QDs reveals that GL of 2.21–2.31 eV disappears at excitation wavelengths > 400 nm. This is related to the electronic transition from conduction band (CB), or shallow donor defect centers, to deep defects of VZn‐H complexes at ≈0.9 eV above the valence band (VB). The EPR peak g = 1.96 emerged only when irradiated with light shorter than 400 nm, which is explicitly correlated with the electrons trapped in the CB or the shallow donors participating in the GL. A spin‐spin relaxation time (T2) estimated from the peak‐to‐peak line width ΔHpp in the EPR signal is ≈17.5–52.5 ns, which is two orders of magnitude longer than known values for bulk or thin‐film ZnO.
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