Abstract
(a) Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10,16200 Praha 6, Czech Republic(b) IPCMS, Groupe d’Optique Nonlineaire et d’Optoelectronique, Unite Mixte 380064,CNRS-ULP-EHICS, F-67037 Strasbourg Cedex, France(c) Faculty of Chemistry, Technical University, Veslarska 230, 63700 Brno,Czech Republic(d) Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3,12116 Praha 2, Czech Republic(Received June 23, 1997)Absorption spectra in the visible and IR regions and photoluminescence (PL) spectra of wide-gaphydrogenated amorphous silicon (a-Si:H) are investigated. The possible origin of the room tempera-ture visible PL is discussed. First electroluminescence results on a p–i–n structure are reported.
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