Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

Abstract

In this work, we investigated structural, morphological, electrical, and optical properties from a set of ${\text{Cu}}_{2}\text{Zn}\text{Sn}{\text{S}}_{4}$ thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase ${\text{Cu}}_{2}\text{Zn}\text{Sn}{\text{S}}_{4}$ thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the ${\text{Cu}}_{2}\text{Zn}\text{Sn}{\text{S}}_{4}$ solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29--40 meV was estimated, and a value of $172\ifmmode\pm\else\textpm\fi{}2$ meV was obtained for the potential fluctuation in the valence-band edge.