Photoluminescence and electrical properties of N-implanted ZnO films

Abstract

ZnO thin films deposited on glass substrate were implanted by 140keVN ions at a dose of 2×1016/cm2 and were then annealed in vacuum for 1h at different temperatures. Hall effect and photoluminescence (PL) measurements were performed to investigate the electrical and optical properties of the films. PL measurements reveal that N ion implantation can deteriorate the photoluminescence. The subsequent annealing leads to the increase of the luminescence. Hall effect measurements indicate that the N-implanted ZnO film annealed at 600°C is still n-type and carrier concentration is as high as 6.67×1022 cm−3. Lattice mismatch and the high doping levels are responsible for the difficulty in fabrication of p-type ZnO thin films by high dose N ion implantation.