Abstract
Temperature-dependent photoluminescence measurements and deep level transient spectroscopy have been made to identify defects and deep level traps in InGaAsN alloys lattice-matched to GaAs. The epitaxial layers were grown by molecular beam epitaxy at different substrate temperatures. Defect levels responsible for the quenching of luminescence with increase of temperature have been identified. Several electron trap levels have been identified and characterized in the alloys. The concentrations of all of these increase with N content in the alloy. A dominant center, with an activation energy of ET=0.44eV, is present in all the samples and its concentration is inversely proportional to photoluminescence intensity. H2O and O present in the source nitrogen are believed to be responsible for the presence of this trap, which also has characteristics similar to the E3 and E4 levels in molecular beam epitaxial GaAs.
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