Abstract
High-quality Sn(IV)-doped CdS nanowires were synthesized by a thermal evaporation route. Both XRD and Raman scattering spectrum confirmed the doping effect. The room temperature photoluminescence (PL) demonstrated that both near bandgap emission and discrete trapped-state emission appeared simultaneously and significantly, which were attributed to the strong exciton trapping by impurities and electron–phonon coupling during the light transportation. The PL intensity ratio of near bandgap emission to trapped-state emission could be tune via doped Sn(IV) concentration in the CdS nanowires. It is interesting that the trapped-state emission shows well separated peaks with the assistance of 1LO, 2LO, 4LO phonons, demonstrating the boosting electron–phonon coupling in these doped CdS nanowires. The influence of Sn(IV) dopant is further revealed by PL lifetime decay profile. The optical micro-cavity also plays an important role on this emission process. Our results will be helpful to the understanding of doping modulated carrier interaction, trapping and recombination in one-dimensional (1D) nanostructures.
Highlights
One-dimensional (1D) nanowires were attractive because they can function as both building block devices and integrated nanosystems [1,2,3,4]
The room temperature photoluminescence (PL) demonstrated that both near bandgap emission and discrete trapped-state emission appeared simultaneously and significantly, which were attributed to the strong exciton trapping by impurities and electron–phonon coupling during the light transportation
It is interesting that the trapped-state emission shows well separated peaks with the assistance of 1LO, 2LO, 4LO phonons, demonstrating the boosting electron–phonon coupling in these doped CdS nanowires
Summary
One-dimensional (1D) nanowires were attractive because they can function as both building block devices and integrated nanosystems [1,2,3,4]. As a polar semiconductor with the electron-LO phonon coupling constant of 0.65, exciton energy modification in CdS nanostructures is expected due to the strong Fröhlich interaction and deformation potential [15]. Electron–hole plasma (EHP) and Fabry–Perot (F-P) optical resonant processes could responsible for stimulated emission of aligned CdS nanowires, the tunable wavelength range is small and the EHP often damages the nanowires [18]. These examples demonstrated that tuning of Fröhlich electron–phonon coupling along the 1D axial light propagation was a plausible way to realize variable emission or lasing wavelength. Branched CdS nanowires have been grown via Sn nanowire-template route under thermal annealing and show interesting optical waveguide properties [19]
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