Abstract
There are a few studies reported in the literature describing the conversion of intrinsic defects but the involvement of nitrogen-interstitials in diamond has not been reported so far. In this paper, a detailed study on the conversion of nitrogen-interstitials in diamond during the irradiation and further annealing were presented by the micro-photoluminescence spectra. The results indicated that the interstitials were immobile until 300 °C and then escaped from the nitrogen capture, followed by migration and recombination with vacancies in the structure of nitrogen-vacancy and vacancy centers.
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