Abstract
Silicon-doped In x Ga 1− x N films (0.01≲ x≲0.03) have been grown by metalorganic vapour phase epitaxy on sapphire substrates. The evolution of the photoluminescence (PL) lineshape has been studied as a function of temperature and electron concentration n. PL linewidths are related to n by a power law. High-energy slopes of PL spectra indicate quasi-thermal equilibrium at room temperature justifying the use of the van Roosbroeck–Shockley (vRS) relation to link both absorption and PL. Absorption characteristics as implied by this relation are compared with experimental absorption spectra.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
