Abstract
Structures of intragrain defects were investigated by photoluminescence (PL) mapping tomography in multicrystalline silicon wafers for solar cells. PL dark patterns were observed in short minority carrier diffusion length regions, and we confirmed that the patterns came from the intragrain defects. The tomography revealed that the defects have planelike structures extended to the crystal growth direction. We also found that the growth conditions affect the structures of the defects: slower solidification leads to larger defects with lower density. Origins of the defects were analyzed by low-temperature PL spectroscopy, electron backscatter diffraction pattern measurement and etch-pit observation. We concluded that the defects are metal contaminated dislocation clusters which originate from small-angle grain boundaries.
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