Abstract
We report an experimental study on the optical absorption and photoluminescence detected in samples of natural silica. Our results show that the two emission bands, β (∼3.1 eV) and α E (∼4.3 eV), have an excitation profile in the vacuum ultraviolet region with a maximum at ∼7.5 eV. This excitation profile indicates that, in terms of energy levels of the luminescent defect, there is a transition from a ground state, S 0, to a second excited state, S 2, able to excite PL emission, in addition to the well known transition corresponding to the optical absorption band, B 2β. Our data are in a quantitative agreement with `ab initio' calculations carried out for a two-fold coordinated Ge defect in SiO 2 and exclude a correlation between the S 0 → S 2 transition and the 7.6 eV E band.
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