Abstract
Polymethyl methacrylate (PMMA) is widely used as an electron beam resist but is not used as a photoresist because of its insensitivity to electromagnetic radiation with wavelengths longer than about 300 nm. In this paper we describe a technique for performing conventional photolithography with high molecular weight PMMA at the widely used 365 nm i-line wavelength. The technique involves photosensitizing PMMA with Irgacure 651—a commercially available photo-initiator that can cause PMMA strands to cross-link. Optimum amount of Irgacure can produce a negative tone photoresist with adequate photosensitivity and plasma etch resistance. We describe this technique in detail with complete processing conditions and discuss the effects of varying Irgacure 651 concentration in PMMA as well as changes in UV exposure dose. We also show example structures patterned with commonly available materials and equipment. Finally, we show that it is possible to carry out gradient lithography with this approach, in order to produce structures in relief in photosensitive PMMA.
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