Photolithographically patterned N-channel organic thin film transistors using sensitized polyvinyl alcohol

Abstract

Abstract The fabrication of n-channel thin-film transistors N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) using conventional photolithography has been demonstrated. Sensitized polyvinyl-alcohol (PVA) was spin coated on top of the organic semiconductor (OSC) film followed by UV exposure and reactive ion etching in oxygen to form the desired active channels. The highest mobility obtained was 1.65 cm2/Vs for these photolithographically patterned devices with on-to-off current ratio of greater than 106. The electronic performances of these devices were comparable to the ones fabricated using stencil mask. These devices were also put under bias stressed in the linear regime where the drain current decayed as a function of time. This patterning method indicates that we are a step closer to the realization of a high performance large-scale fabrication of organic complementary metal-oxide-semiconductor (O-CMOS) circuits.