Abstract
Recently, several authors have investigated the photoionization of impurities in quantum well systems. The shape of the cross-section profile depends upon the type of polarization of the incident radiation. There has not been sufficient work either on magnetic superlattices or on the effects of electric field on photoionization cross-section. In the present work, cross-sections are calculated for the GaAs/Al x Ga 1− x As quantum well system in external electric fields with finite and infinite barriers. Results are compared with available data in the literature.
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