Abstract
In this research, we conducted a numerical analysis on the photoionization cross section (PCS) of a shallow donor impurity confined in a diluted magnetic semiconductor (DMS) Cd1−xwMnxwTe/Cd1−xbMnxbTe double quantum well (DQW). The effective-mass approximation was employed, and the Schrödinger equation describing the electron motion was solved using the variational method. This study focuses on calculating the binding energy (Eb) by taking into account the effect of spin polaronic shift. Moreover, we calculated the photoionization cross-section (PCS) considering different polarized light directions, varying well widths (Lw), barrier thickness (Lb), and different hydrostatic pressure (P) values as well as the incorporation of the effect of the non-parabolicity (NP) conduction band and polaronic mass (PM). The results reveal that the overall shape of the PCS depends strongly on the light polarization axis. Additionally, the threshold energy exhibits a blueshift with increasing barrier thickness and hydrostatic pressure, and a redshift with increasing the well width.
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