Abstract
Liam McRae and Behrad Gholipour (article number 2101046) show that metal-doped amorphous chalcogenide semiconductors (MdACs) exhibit photo-induced long-range movement of their constituent metal-ions when exposed to light with a photon energy equivalent or higher than the bandgap of the chalcogenide host. This “photo-ionic” movement results in non-volatile changes of material properties at the nanoscale facilitating robust, non-binary dynamic modulation of light without the need for a phase transition. The use of this mechanism in metasurfaces to realize reversible optical switching across visible frequencies is consequently explored.
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