Abstract
A study of photoinduced optical changes in some new GeSBi and GeS2GaI amorphous compositions has been performed. The known glass-forming ability in the GeSBi system has been extended by obtaining glassy (GeS2)100 - xBix (x = 4, 8, 12) phases. The observed thermo-bleaching effect in the thin films is significantly more pronounced than the photo-bleaching induced by ultraviolet exposure. Maximum values of the relative shift, Δλ, in the optical absorption edge for GeS2GaI films have been found at a GeS2Ga ratio of 3 and an I content up to 30 at.%. Summarizing all of the results concerning amorphous GeS2-based thin films, with additions of Bi, Ga and/or I, it can be concluded that the largest photoinduced optical transformations have been observed for Ga-containing samples.
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