Abstract
The various photoinduced changes that occur in chalcogenide glasses upon absorption of band-gap light have been investigated by a variety of techniques. The first part of this paper describes studies by Raman scattering of the irreversible and reversible photostructural changes which occur in differently prepared vacuum-deposited amorphous chalcogenide films. Photoinduced changes in the Raman spectra in conventionally prepared amorphous films are interpreted by rearrangement of bonding configurations of molecular species which exist just after evaporation. The reversible photoinduced change in well annealed films involves a very small change in the short-range order. The most significant structural changes with photodarkening occur in the medium-range order. In the second part, the emphasis is placed on the light-induced changes in electrical transport properties. Several complementary experimental techniques have been employed including transient response, steady-state photoconductivity and xerographic measurements. Results suggest that metastable deep defect centres can be altered by irradiation. The observed changes in electronic transport are probably caused by the same photoinduced defects which give rise to the reversible photodarkening in a number of chalcogenide glasses.
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