Abstract
Abstract We show that dopant impurities can be introduced in a controlled, site-specific manner into pre-deposited semiconducting boron carbide films. B―N bond formation has been characterized by X-ray photoelectron spectroscopy for semiconducting B 10 C 2 H x films exposed to vacuum ultraviolet photons in the presence of NH 3 . Core level photoemission data indicate that B―NH 2 bonds are formed at B sites bonded to other boron atoms (B―B), and not at boron atoms adjacent to carbon atoms (B―C) or at carbon atom sites. Nitridation obeys diffusion-limited kinetics. These results indicate that dopant species can be introduced in a controlled, site-specific manner into pre-deposited boron carbide films, as opposed to currently required dopant incorporation during the deposition process.
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