Abstract
We investigate the kinetics of photodarkening and recording of holographic diffraction gratings in amorphous As4S3Se3 thin-film structures doped with tin (Sn) in concentrations of 0–10 at %. It is established that an increase in the Sn concentration leads to a decrease in the photodarkening rate and degree. The photodarkening kinetics is approximated by a stretched exponential function. It is found that an increase in the Sn concentration leads to a decrease in the transmission (photodarkening) variation in the investigated As4S3Se3–Sn films. It is determined that, in the recording of holographic diffraction gratings at a Sn concentration of 3–8 at %, the As4S3Se3–Sn films exhibit the maximum sensitivity and diffraction efficiency of the recorded gratings. It is shown that the dependence of diffraction efficiency on the As4S3Se3 film thickness has the maximum at a film thickness of 4 µm.
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