Abstract
An illumination memory previously observed in a polyaniline/polyvinylcarbazole double-layered photoconductor was studied in detail. Various parameters were examined, such as the corona condition, the light intensity, the wavelength, and the exposure energy. Ionized polyaniline molecules with a dopant anion were considered to be responsible for the memory effect. They were dissolved and diffused into the polyvinylcarbazole layer, and upon light absorption they induced photoconduction accompanied by the memory effect. The memory effect was found to be linear against the amount of surface charges dissipated by photons. By optimizing the parameters, a large memory contrast potential more than 500 V, which is suffciently high for most practical applications, was obtained.
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