Abstract
We report on negative magnetoresistance (MR) of −0.46% in low external magnetic fields in pentacene field-effect transistors. This effect can only be observed if the device is irradiated. MR strongly depends on gate voltage but is independent of drain voltage. Furthermore, the MR increases as the intensity of irradiation increases and the relationship of both parameters is not linear. The dependency of MR on magnetic field is not linear either, but it follows non-Lorentzian line shape. The triplet exciton-charge reaction model is a possible explanation for negative MR in irradiated pentacene field-effect transistors.
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