Abstract
The fluence dependence of two-photon photoemission and time resolved two-color pump–probe photoemission spectroscopy of a 25 ML thick Ag-film grown on n-doped Si(100) reveal a photoinduced work function reduction that is attributed to a reduction of the surface dipole. Time-resolved two-color pump–probe spectroscopy shows that this reduction persists for at least several microseconds. This and the pump-induced modification of the 4.65 eV two-photon photoemission spectrum indicate that the excitation of long-lived trap states at the Ag-Si interface affects the charge distribution in the Ag film and consequently is responsible for the reduction of the surface dipole.
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