Abstract
The dynamics of laser heating and melting of Si in UHV is investigated by transient reflectivity with single pulse sensitivity. It is found that the heating and melting dynamics cannot be accounted for by a model of heat flow using the thermal and optical properties of Si. Experiment and theory can be reconciled assuming significantly smaller thermal conductivity and heat capacity at all temperatures from ambient to melting. The melting temperature is also smaller. It is suggested that these specific parameters are related to the photoinduced plasma.
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