PHOTO-INDUCED EFFECTS FIRST ORDER IN CHALCOHENID SYSTEMS OF AG-GA(IN)-SI(GE)-S(SE)

Abstract

To study the possibilities of the most efficient use of crystals in optoelectronic devices, we studied the change in the absorption coefficient depending on the energy of the incident electromagnetic wave (photoinduced absorption). It was found that photoinduced absorption changes were observed under the influence of a microsecond pulsed CO2 laser and a solid-state laser with a wavelength of 808 nm. When irradiated with 808 nm laser, the photoinduced changes are associated with pure electronic transitions, and when irradiated with CO2, these levels are excited due to the interaction of phonons. The similarity of the changes caused by the solid-state laser with a wavelength of 808 nm and the CO2 laser testifies to the fundamental role of the electron-phonon interaction. The study of changes in the absorption coefficient near the edge of the intrinsic absorption band when irradiated with a solid-state laser (808 nm) shows the absence of irreversible modifications. This allows the use of these materials for use as optically controlled materials for visible and infrared lasers.