Abstract
Thin amorphous Ge-As-S(Se) films were deposited on Si substrates. After deposition, a mechanical stress arises in the film due to the difference in lattice parameters. Photo- and thermo-structural changes were induced in the films by band-gap illumination or heat treatment. These structural changes cause the stress to change its value and/or sign. That is why the stress was used as a tool to investigate the photo- and thermo-induced changes. The investigation includes also a study of the compositional dependence of the stress in the chalcogenide film/Si substrate systems. Some infrared spectra have been measured in order to analyze the possible nature of the induced changes.
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