Abstract
The decay of the photoinduced midgap absorption band was studied in a-Si: H doped with P and B and compared with the decay in undoped a-Si: H and in a-H with a high concentration of dangling bonds produced by electron irradiation. At high temperatures, recombination controlled by multiple trapping transport is observed in most samples. At low temperatures an additional recombination process is observed and attributed to tunneling which increases with doping. The temperature dependence of the decays correlates with dangling bond density produced by doping or irradiation.
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