Abstract
AbstractWe have investigated photo‐induced absorption changes for In0.10Ga0.90N multiple quantum wells and a thin film induced by a continuous‐wave (cw) beam and a femtosecond pulse in the violet region. For the thin‐film sample, nearly the same absorption changes were observed in cw pumping and pulse pumping measurements. Screening of the piezoelectric field in InGaN heterostructures causes absorption changes around the band edge. This screening results from spatial separation of electron–hole pairs to the opposite sides of the InGaN epilayer. These spatially separated carriers are trapped in deep levels and maintain the absorption changes. The trapped charges are considered to be thermally excited to the conduction band and diffuse to attain the equilibrium state. This process takes on the order of 100 μs and such a long decay time of absorption changes allows us to have large absorption changes even by low‐intensity cw pumping. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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