Photogenerated carriers enhancement in Cu-doped ZnSe/ZnS/L-cys self-assembled core-shell quantum dots

Abstract

The photoelectron characteristics and nano-doping mechanism of Cu-doped ZnSe/ZnS/L-cys self-assembled core-shell quantum dots (QDs) are studied by surface photovoltaic (SPV) and photoacoustic (PA) techniques, XRD, HRTEM, FT-IR, UV-VIS adsorption, and Laser Raman spectra. The results suggest that the doped copper element prefers to locate at the Zn atom-vacancy of the (111) face of the QDs in the Cu2+ ion form. The defect-state levels are referred to the shallow accepter levels, leading to an obvious quantum confinement effect and a weakened n-type surface photovoltaic characteristic in the Cu-doped QDs. The quantum confinement effect strongly depends on the depth of the quantum well that is buried in the space charge region located in the graded-band-gap and at the side of the core-ZnSe. These electron structures are responsible for the increased lifetime and diffusion length of photogenerated free charge carriers, which significantly enhance the intensity of SPV response, enlarge the range of SPV response, and weaken the PA signals that are closely related to non-radiation deexcitation processes.