Photogalvanic effect in spin-polarized zigzag antimonene nanoribbon with Cr and Co edge-modification

Abstract

The photogalvanic effect (PGE) enables materials to generate photocurrent under zero bias and has a high polarization sensitivity in a broadband range, showing potential applications in the low-power two dimensional (2D) optoelectronic devices. Here, we compare the PGE for zigzag antimonene nanoribbons (SbNR) edge-modified by H, Cr and Co atoms in the visible range based on quantum transport calculations. It is found that the photoresponse and extinction ratio of Cr-SbNR and Co-SbNR are spin-polarized compared to those of H-SbNR. A cosine dependence on the polarization angle is found for photocurrent generated under the illumination of linearly polarized light in all three systems. Calculation indicates Co modification has a more significant effect on improving the photoresponse and polarization sensitivity of the device than Cr modification. These results show that in the visible range, antimonene nanoribbon edge-modified by Co atoms might be a promising candidate for photodetection in spintronic devices. • The PGE results of zigzag antimonene nanoribbons edge-modified by Cr and Co atoms are spin-polarized. • The photoresponse and polarization sensitivity of Cr and Co systems are strongly related to the spin state. • Enhanced PGE is observed in antimonene nanoribbon passivated by Co atoms. • Co-modified device might be a promising candidate for photodetection in visible range due to its significant PGE response and polarization sensitivity.