Abstract
Photofield emission from SiGe nanoislands formed by molecular beam epitaxy (MBE) have been investigated. Two types of nanoislands, namely the domes and pyramids with different heights, have been addressed. It was found that the arrays of SiGe nanoislands exhibited a low onset voltage for field emission. The increase of emission current and the decrease of the curve slope in Fowler-Nordheim coordinates under green light illumination have been revealed. Electron field emission and photoemission from SiGe nanoislands have been explained based on the energy band diagram of Si-Ge heterostructure and some energy barriers have been determined.
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