Abstract
Although the modulation doping technique has been instrumental in achieving high electron mobilities [1] it is also responsible for a radiation sensitive effect known as persistent photoconductivity (PPC). [2] This effect is characterized by a light-induced conductivity enhancement that persists for long times (in some systems, > 108 sec) at low temperatures. The PPC arises from the excitation of electrons out of deep donor-related traps in the AlGaAs, known as DX centers, which suppress recapture due to a large lattice relaxation.[3] In the GaAs/AlxGa1-x As system these excited electrons are able to maintain quasiequilibrium with the two-dimensional electron gas (2-DEG) layer in the GaAs, forming a parallel conduction path in the AlxGa1-xAs.
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