Photoexcited elastic waves in free-standing GaAs films

Abstract

The ability to generate transversely propagating elastic waves on free-standing semiconductor films in the 10+ GHz frequency range is a critical element in the effort to achieve phonon-based coupling to on-chip electronic devices. The results of this joint experimental and theoretical study show that such phonons are created by the excitation of free-standing optically subwavelength thickness GaAs films with highly focused femtosecond optical pulses. With sufficiently high strain levels, this approach could become enabling for applications in nano-optomechanics.