Abstract
Experimental investigations of carrier transport and capture into quantum wells are performed for InAlGaAs/InP laser structures. Time-resolved photoluminescence measurements are made by upconversion technique. The characteristic times for the ambipolar carrier transport in the confinement region and the electron capture into the quantum wells are about 2–5 and 1 ps, respectively. The obtained results show a good potential for high-speed InAlGaAs/InP quantum well lasers operating in the 1.5 μm spectral region.
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