Abstract
Photoexcited carrier dynamics and localization potentials in Al0.86In0.14N/GaN heterostructures have been examined by time-resolved and scanning near-field photoluminescence (PL) spectroscopy. The large GaN and AlInN PL intensity difference, and the short AlInN PL decay and GaN PL rise times indicate efficient photoexcited hole transfer from AlInN to GaN via sub-band-gap states. These states are attributed to extended defects and In clusters. Near-field PL scans show that diameter of the localization sites and the distance between them are below 100 nm. Spatial variations of the GaN PL wavelength have been assigned to the electric field inhomogeneities at the heterostructure interface.
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