Photoexcitation of planar Wannier excitons by twisted photons

Abstract

Photoexcitation of planar Wannier excitons by twisted photons in thin semiconductor films is investigated. The excitons are assumed to be already created. The explicit general formulas for transition probabilities between exciton states are derived. The selection rules for the projection of the total angular momentum are obtained. As examples, the Coulomb and Rytova–Keldysh electron–hole interaction potentials are considered. The use of planar excitons as a pure on-chip source of twisted photons is discussed. The formulas obtained also describe photoexcitation of states of electrons and holes bound to charged impurities in planar semiconductors.