Abstract
AbstractPhotoelectrochemical etching (photoetching) of polycrystalline CdS electrodes has been investigated, by the first time, by electrolyte electroreflectance (EER) technique. EER is shown to be a very powerful tool for the “in situ” study of the potential distribution changes occurring at the semiconductor‐electrolyte interface, even in the case of polycrystalline electrodes with scarce specular reflection. The EER study of the effect of photoetching on the photoelectrochemical behaviour of polycrystalline CdS electrodes allows a further insight into the origin and mechanisms involved in this interesting etching technique.
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