Photoenhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp

Abstract

AbstractThis paper describes the optical and electrical properties of silicon oxide thin films produced using a novel photoenhanced deposition technique. Since there is no damage to the growing film surface from energetic ions, this process has the potential to produce better semiconductor/insulator interfaces than those grown using conventional RF glow discharge techniques. The deposition system is comprised of a windowless nitrogen discharge lamp contained within the reaction vessel. This unified approach allows the low wavelength UV light from the lamp to couple directly into the reaction gases without attenuation by a window material or the need for mercury sensitisation. Thin films of silicon oxide have been deposited onto single crystal silicon wafer substrates from a nitrous oxide/monosilane reaction gas mixture. The deposition rate and physical properties of films produced in this way are comparable to those of high quality insulator films deposited by plasma enhanced CVD techniques. The results of electrical tests indicate that this material could be used as a low temperature deposited insulator for thin film devices.