Abstract
The process of V Si(100)2 × 1 interface formation has been examined using low energy electron diffraction (LEED) and photoemission spectroscopy (PES) with synchrotron radiation (SR). The results allow us to conclude that the deposited V atoms interact chemically with Si atoms from the beginning of V deposition on the Si substrate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have