Abstract
We present a soft x-ray photoemission spectroscopy (SXPS) study of the Pd/InP(110) interface. SXPS has been used to study chemical reactions, overlayer morphology, and Fermi level pinning behavior during the early stages of interface formation. Strong reactions involving Pd and both species of the substrate have been documented and discussed. We took advantage of the tunability of the synchrotron source to study p–d valence band hybridization near to, and far from the Pd 4d cross section Cooper minimum. This was combined with a detailed study of the line shape of the P LVV Auger transition. Because of the strong reactions we had to unfold the core level spectra into their different components to follow the Fermi level pinning. Such an analysis shows that Fermi level pinning is established at the same energy, 0.45 eV below the conduction band minimum, for n and p-type crystals with Pd coverages of about 1 ML. This energy agrees with barrier heights established from the current–voltage characteristics measured on thick diodes grown under identical conditions. On the basis of the data, correlations proposed to describe barrier heights and chemical reactions at metal/InP interfaces are evaluated.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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