Abstract
Synchrotron radiation photoemission spectroscopy is used to study the electronic structure and growth mechanisms of Sn on cleaved GaAs(110) surfaces. Detailed core-level analysis, along with the substrate intensity attenuation and valence-band information, indicate that Sn forms nondisruptive bilayer patches on cleaved GaAs(110) surface for coverage θ between 0≤θ≤ 1 monolayer (ML). In the 1<θ<2.5 ML coverage range, the bilayer growth atop the substrate is accompanied by the initial growth of Sn-based structures on top of the bilayer. The bilayer and Sn-based structures are semiconducting. The substrate is completely covered at ∼2.5 ML. Continued deposition above 2.5 ML results in Sn clusters. A Sn-induced density of states progressively fill in the region between the valence-band maximum (VBM) and the Fermi level (EF) with Sn deposition. At coverages above 3 ML, Sn derived states show emission at EF. The electronic structure changes during the interface development leads to the continuous band bending towards midgap. The total amount of band bending at 8 ML is about 0.67 eV.
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