Abstract
A layer of Pr 2O 3 with a thickness of about 20 Å was grown on Si(100) at room temperature by evaporating Pr in an oxygen ambiance. The interaction of the Pr 2O 3 overlayer with Si(100) has been investigated in situ after annealing at different temperatures by means of X-ray photoelectron spectroscopy (XPS). The Pr 2O 3 deposition enhances the oxidation rate of the substrate. The silicon atoms can easily diffuse from the substrate into the Pr 2O 3 layer, forming a Pr–O–Si silicate as well as SiO 2. Annealing facilitates the diffusion of the silicon atoms, leading to the continual growth of the silicate. The intensity of Pr 2O 3 decreases at temperatures over 590 K and the silicate becomes dominant after annealing at 790 K. Angle-dependent XPS taken after annealing at 1090 K indicates that the silicate moves to the top surface. The amount of SiO 2 remains almost constant during annealing.
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