Abstract
The surfaces of luminescent InP nanocrystals were investigated by photoelectron spectroscopy (PES) technique with synchrotron radiation. Semiconductor samples were prepared by an organometal- lic approach using trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO) as stabilizing and size regulating agents. As prepared, InP nanocrystals exhibit poor photoluminescence (PL) yield, usually less than 1%. However the yield can be drastically enhanced to about 20−30% by photoetching of the nanopar- ticle surface with fluorine compounds. High resolution In 3d and P 2p core level spectra of etched and non-etched particles taken at different excitation energy reveal changes of the nanocrystal surface. Three different InP samples are analyzed and a simple model for the etching process is discussed. PACS. 79.60.Jv Interfaces; heterostructures; nanostructures - 78.55.Cr III-V semiconductors
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