Abstract
Ultrathin Pr 2O 3 films with various thicknesses were grown on SiO 2/Si(100) at room temperature by evaporating Pr in an oxygen ambiance. The interfacial reactions at the Pr 2O 3/SiO 2/Si interfaces were investigated in situ as a function of annealing temperature by using X-ray photoelectron spectroscopy (XPS). The intermixing between Pr 2O 3 and SiO 2 can be observed even at room temperature, resulting in the formation of Pr silicate at the interface. The intermixing is enhanced at elevated temperatures, leading to the continual growth of the silicate and consumption of Pr 2O 3 and SiO 2. By controlling the thickness of the ultrathin Pr 2O 3 film deposited, structures of Pr silicate/SiO 2/Si and Pr 2O 3/ Pr silicate/Si can be readily achieved by ultrahigh vacuum (UHV) annealing.
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