Abstract
The initial formation of the InAs/InP(001) heterojunction has been studied via core level and valence band photoelectron spectra from a three monolayers thick InAs film on InP. We find that the valence band spectra show no evidence for the formation of bulk-like energy bands in the direction perpendicular to the interface. On the contrary, the measured band dispersions are the same as those of the substrate InP. Consequently we claim that it is not meaningful to extract a band offset parameter from this type of data.
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