Abstract
The growth and characterization of ZnSe epilayers on GaAs(111)B was studied. Insight into the formation mechanism of this type of surface, interface, and bulk has been provided by photoemission spectroscopy. When Zn and Se are deposited, Se reacts with As to form Se–As bonds. Therefore, the electron mean free path obtained from the intensity variation of the surface As layer is less than that from the As bulk intensity since its emission is transferred from the surface peak into chemically shifted As peak. Deposition of ZnSe results in a substrate core level shift of 0.59 eV toward lower binding energy. A value of 0.91 eV for the valence band offset, with the valence band maximum of ZnSe below that of GaAs, was obtained.
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