Abstract
We present angle integrated 4ƒ photoemission from Yb 3Si 5, YbSi and Yb 5Si 3 taken with synchrotron radiation ( hv = 80 eV, hv = 450 eV, and hv at the 4d-4ƒ threshold). The Yb valence is determined and Si2 p shifts are also given. Yb 3Si 5 and YbSi are homogeneous mixed valent in the bulk; in Yb 5Si 3, which has inequivalent Yb sites, one Yb specie is divalent and the other is mixed valent. This shows the connection between mixed valence and local steric effects due to crystal structure. In all compounds the Yb is divalent in the surface region.
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