Abstract
We have used x-ray photoelectron spectroscopy to study the oxidation of cerium overlayers on a semiconductor GaSb(110) surface. A GaSb(110) sample covered with 10 monolayers Ce was used to adsorb oxygen. When the exposure of O2 was up to 50 L, the oxide of cerium, Ce2O3, began to change into unstable CeO2. The dissociation of CeO2 resulted in strong oxidation of the substrate. The main products are Ga2O3, Sb2O3, and then Sb2O5. After annealing, a part of the oxygen atoms transferred from cerium dioxide toward Ga and Sb.
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