Abstract
The adsorption of trimethylgallium (TMG) on GaAs (110) surface at room temperature was studied with ultraviolet photoemission spectroscopy by use of synchrotron radiation. The adsorption was found to saturate for TMG exposure as low as 3 langmuirs (L) resulting in a coverage of less than 0.1 monolayer. It is concluded that TMG molecules are adsorbed on the GaAs surface without decomposition.
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