Abstract
The surface termination and geometric structure of molecular beam epitaxially (MBE)-grown HgSe(001) has been studied by means of X-ray photoelectron spectroscopy (XPS) and high-resolution low-energy electron diffraction. The surface exhibit a c(2×2) reconstruction and is terminated by Hg. In addition, the valence band offset of the HgSe/CdSe(001) heterostructure has been investigated by k-resolved ultraviolet photoemission (UPS). Special care was taken to determine the true position of the VB maximum in the Brillouin zone ( Γ-point) by using Ar–I excitation during the angle-dependent UPS measurements. Thus, the valence band discontinuity was determined as 0.58±0.05 eV. This value and recent results for the HgTe/CdTe heterojunction support the trend expected by theory predicting a larger Δ E VBO for selenides than for tellurides.
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