Abstract
A photoemission model of graded band-gap AlGaAs/GaAs wire NEA photocathode is developed based on the numerical solution of coupled Poisson and continuity equations. The emission current density and integral sensitivity of graded band-gap AlGaAs/GaAs wire photocathode as a function of incident light wavelength, Al composition range, and wire length, are simulated according to the model. The simulation results show that, compared with the GaAs (Al composition 0) wire photocathode, the peak integral sensitivities for the photocathodes with wire width of 1µm and linearly graded Al composition ranges of 0 to 0.1, 0.2, 0.3, and 0.4 increase by 29.5%, 38.5%, 42.1%, and 43.8%, respectively. The optimum wire lengths are 4.7, 5.9, 7.1, and 8.4µm for the wire photocathodes with Al composition ranges of 0 to 0.1, 0.2, 0.3, and 0.4, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
